Origin of defects on targets used to make extreme ultraviolet mask blanks

نویسندگان

  • He Yu
  • Daniel Andruczyk
  • David N. Ruzic
  • Vibhu Jindal
  • Patrick Kearney
چکیده

Articles you may be interested in Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks The effects of oxygen plasma on the chemical composition and morphology of the Ru capping layer of the extreme ultraviolet mask blanks Characterization of ruthenium thin films as capping layer for extreme ultraviolet lithography mask blanks Growth and printability of multilayer phase defects on extreme ultraviolet mask blanks Printability of nonsmoothed buried defects in extreme ultraviolet lithography mask blanks

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Defect tolerant extreme ultraviolet lithography technique

Related Articles Comparison of the effects of downstream H2and O2-based plasmas on the removal of photoresist, silicon, and silicon nitride J. Vac. Sci. Technol. B 31, 021206 (2013) Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography J. Vac. Sci. Technol. B 31, 021605 (2013) Origin of defects on...

متن کامل

Effects of photoacid generator incorporation into the polymer main chain on 193nm chemically amplified resist behavior and lithographic performance

Related Articles Comparison of the effects of downstream H2and O2-based plasmas on the removal of photoresist, silicon, and silicon nitride J. Vac. Sci. Technol. B 31, 021206 (2013) Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography J. Vac. Sci. Technol. B 31, 021605 (2013) Origin of defects on...

متن کامل

Deep subwavelength nanolithography using localized surface plasmon modes on planar silver mask

Articles you may be interested in Simulation study of cleaning induced extreme ultraviolet reflectivity loss mechanisms on mask blanks

متن کامل

Cost-driven mask strategies considering parametric yield, defectivity, and production volume

We provide new yield-aware mask strategies to mitigate emerging variability and defectivity challenges. To address variability, we analyze critical dimension variability with respect to reticle size and its impact on parametric yield. With a cost model that incorporates mask, wafer, and processing cost, considering throughput, yield, and manufacturing volume, we assess various reticle strategie...

متن کامل

Comprehensive defect avoidance framework for mitigating extreme ultraviolet mask defects

Defect avoidance methods are likely to play a key role in overcoming the challenge of mask blank defectivity in extreme ultraviolet (EUV) lithography. In this work, we propose an innovative EUV mask defect avoidance method. It is the first approach that allows exploring all the degrees of freedom available for defect avoidance (pattern shift, rotation and mask floorplanning). We model the defec...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014